APTGT30X60T3G APTGT30X60T3G C rev 1 october, 2012 www.microsemi.com 1-6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 50 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 60 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 90 w rbsoa reverse bias safe operating area t j = 150c 60a @ 550v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 31 14 r1 13 2 28 25 23 1520 1619 10 18 22 30 293 4 8 7 1112 it is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if dc power is connected between pins 15, 16 & 12. pins 15 & 16 must be shorted together. 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 v ces = 600v i c = 30a @ tc = 80c application ? motor control features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant 3 phase bridge trench + field stop igbt3 power module downloaded from: http:///
APTGT30X60T3G APTGT30X60T3G C rev 1 october, 2012 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 30a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 400a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 300 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1600 c oes output capacitance 110 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 50 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 30a r g = 10 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 30a r g = 10 ? 60 ns t j = 25c 0.16 e on turn-on switching energy t j = 150c 0.3 mj t j = 25c 0.7 e off turn-off switching energy v ge = 15v v bus = 300v i c = 30a r g = 10 ? t j = 150c 1.05 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 30 a t j = 25c 1.6 2 v f diode forward voltage i f = 30a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 1.5 q rr reverse recovery charge t j = 150c 3.1 c t j = 25c 0.34 e r reverse recovery energy i f = 30a v r = 300v di/dt =1800a/s t j = 150c 0.75 mj downloaded from: http:///
APTGT30X60T3G APTGT30X60T3G C rev 1 october, 2012 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www. microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 1.6 r thjc junction to case thermal resistance diode 2.45 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT30X60T3G APTGT30X60T3G C rev 1 october, 2012 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 10 20 30 40 50 60 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 10 20 30 40 50 60 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 0.5 1 1.5 2 0 102030405060 i c (a) e (mj) v ce = 300v v ge = 15v r g = 10 ? t j = 150c eon eon eoff er 0 0.5 1 1.5 2 2.5 0 10203040506070 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 30a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =10 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt downloaded from: http:///
APTGT30X60T3G APTGT30X60T3G C rev 1 october, 2012 www.microsemi.com 5-6 forward characteristic of diode t j =25c t j =125c t j =150c 0 10 20 30 40 50 60 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching 0 10 20 30 40 50 60 70 01 02 03 04 0 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =10 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse durati on 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.5 1 1.5 2 2.5 3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode downloaded from: http:///
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